BSS84ZT

UNISONIC TECHNOLOGIES CO., LTD BSS84ZT 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-523 SMD package, and in most applications they require up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch.  FEATURES * RDS(ON) < 10Ω @ VGS=-4.5V, ID=-0.1A  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number BSS84ZTG-AN3-R Note: Pin Assignment: S: Source G: Gate D: Drain Package SOT-523 Pin Assignment 123 SGD Packing Tape Reel  MARKING S84G www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-A61.B BSS84ZT Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -50 V Gate-Source Voltage Continuous Drain Current DC Pulse VGSS ID ±20 -0.13 -0.52 V A Power Dissipation PD 0.15 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 625 UNIT °C/W  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHAR...