N-Channel MOSFET
UNISONIC TECHNOLOGIES CO., LTD
11NM40
Preliminary
11A, 400V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 11...
Description
UNISONIC TECHNOLOGIES CO., LTD
11NM40
Preliminary
11A, 400V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 11NM40 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance.
The UTC 11NM40 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.
FEATURES
* RDS(ON) < 0.38Ω @ VGS=10V, ID=5.7A * High switching speed * Low effective output capacitance (Typ.=95pF) * Low gate charge (Typ.=40nC)
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11NM40L-TF3-T
11NM40G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220F
Pin Assignment 123 GDS
Packing Tube
MARKING
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QW-R502-A38.b
11NM40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 400 V
Gate-Source Voltage Drain Current
Continuous
TC=25°C TC=100°C
Pulsed (Note 1)
VGSS ID IDM
±30 11.6
7 33
V A A A
Avalanche Current (Note 1) Single Pulsed Avalanche Energy (Note 2)
IAR EAS
11 A 154 mJ
Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
EAR dv/dt
12.5 mJ 4.5 V/ns
Total Power Dissipation
TC=25°C Derate above 25°C
PD
125 W 1.0 W/°C
O...
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