K3365

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A) Low Ciss : Ciss = 1300 pF (TYP.) Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3365 TO-251 2SK3365-Z TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 30 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) Drain Current (Pulse) Note ID(DC) ID(pulse) ±30 ±120 Total Power Dissipation (TC = 25 °C) PT 36 Total Power Dissipation (TA = 25 °C) PT 1.0 Channel Temperature Tch 150 Storage Temperature Tstg –55 to + 150 V V A A W W °C °C Note PW ≤ 10 µs, Duty cycle ≤ 1 % THERMAL RESISTANCE Channel to case Channel to ambient Rth(ch-C) Rth(ch-A) 3.48 °C/W 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14255EJ1V0DS00 (1st edition) Date Published September 1999 NS CP(K) Printed in Japan © 1999 2SK3365 ELECTRICAL CHARACTERISTICS (TA...