TK4A60DB
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DB
Switching Regulator Applications
...
TK4A60DB
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DB
Switching
Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
3.9 3.0 15.0 ± 0.3
1.14 ± 0.15
2.8 MAX. 13 ± 0.5
Absolute Maximum Ratings (Ta = 25°C)
0.69 ± 0.15 Ф0.2 M A
2.6 ± 0.1 4.5 ± 0.2
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VGSS
ID
IDP
PD
EAS
IAR EAR Tch Tstg
Rating
600 ±30 3.7
14.8
35
173
3.7 3.5 150 −55 to 150
Unit V V
A
W mJ A mJ °C °C
2.54 2.54 123
0.64 ± 0.15
1: Gate 2: Drain 3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconduct...
