N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
UF8010
80A, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UF8010 uses advanced techno...
Description
UNISONIC TECHNOLOGIES CO., LTD
UF8010
80A, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UF8010 uses advanced technology to provide excellent RDS(ON), fast switching speed, low gate charge, and excellent efficiency. This device is suitable for high frequency DC-DC converters, UPS and motor control.
FEATURES
* RDS(ON) :12mΩ (Typ.) * Lower gate-drain charge for lower switching losses * Perfect avalanche voltage and current performance * Fully characterized capacitance including effective COSS to simplify design
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UF8010L-TA3-T
UF8010G-TA3-T
TO-220
UF8010L-TF3-T
UF8010G-TF3-T
TO-220F
UF8010L-TQ2-T
UF8010G-TQ2-T
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS GDS GDS
Packing
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QW-R502-348.D
UF8010
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Source Voltage
Continuous Drain Current (VGS=10V,TC=25°C)
Pulsed Drain Current
Avalanche Energy
Single Pulse (Note 2) Repetitive
Avalanche Current
Peak Diode Recovery dv/dt (Note 3)
VGS ID IDM EAS EAR IAR dv/dt
±20 80 (Note 2)
320 310 26 45 16
V A A mJ mJ A V/ns
Power Dissipation(TC=25°C) Derating above 25°C
TO-220 / TO-263 TO-220F TO-220 / TO-263 TO-220F
PD
260 W 54 W 1.8 W/°C 0.36 W/°C
Junction Temperature
TJ
+150
°...
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