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UF8010

UTC

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF8010 80A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF8010 uses advanced techno...


UTC

UF8010

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Description
UNISONIC TECHNOLOGIES CO., LTD UF8010 80A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF8010 uses advanced technology to provide excellent RDS(ON), fast switching speed, low gate charge, and excellent efficiency. This device is suitable for high frequency DC-DC converters, UPS and motor control.  FEATURES * RDS(ON) :12mΩ (Typ.) * Lower gate-drain charge for lower switching losses * Perfect avalanche voltage and current performance * Fully characterized capacitance including effective COSS to simplify design  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UF8010L-TA3-T UF8010G-TA3-T TO-220 UF8010L-TF3-T UF8010G-TF3-T TO-220F UF8010L-TQ2-T UF8010G-TQ2-T TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-348.D UF8010 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate to Source Voltage Continuous Drain Current (VGS=10V,TC=25°C) Pulsed Drain Current Avalanche Energy Single Pulse (Note 2) Repetitive Avalanche Current Peak Diode Recovery dv/dt (Note 3) VGS ID IDM EAS EAR IAR dv/dt ±20 80 (Note 2) 320 310 26 45 16 V A A mJ mJ A V/ns Power Dissipation(TC=25°C) Derating above 25°C TO-220 / TO-263 TO-220F TO-220 / TO-263 TO-220F PD 260 W 54 W 1.8 W/°C 0.36 W/°C Junction Temperature TJ +150 °...




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