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IPB065N10N3G

Infineon
Part Number IPB065N10N3G
Manufacturer Infineon
Description MOSFET
Published Feb 17, 2016
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,100V IPB065N10N3G Data...
Datasheet PDF File IPB065N10N3G PDF File

IPB065N10N3G
IPB065N10N3G

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,100V IPB065N10N3G DataSheet Rev.
2.
0 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,100V IPB065N10N3G 1Description Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 D²PAK Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 6.
5 mΩ ID...


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