IPB024N08N5

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V IPB024N08N5 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features Idealforhighfrequencyswitchingandsync.rec. ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) N-channel,normallevel 100%avalanchetested Pb-freeplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplications Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 2.4 mΩ ID 120 A Qoss 116 nC QG(0V..10V) 99 nC OptiMOSª5Power-Transistor,80V IPB024N08N5 D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB024N08N5 Package PG-TO 263-3 Marking 024N08N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPB024N08N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . ...