Document
IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
IGP40N65F5,IGW40N65F5
650VIGBThighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IGP40N65F5,IGW40N65F5
Highspeedswitchingseriesfifthgeneration
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
TargetApplications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters
12 3
Packagepindefinition:
G
C E
•Pin1-gate •Pin2&backside-collector •Pin3-emitter
KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IGP40N65F5
650V 40A
1.6V
IGW40N65F5
650V 40A
1.6V
Tvjmax 175°C 175°C
Marking G40EF5 G40EF5
Package PG-TO220-3 PG-TO247-3
2 Rev.2.1,2015-04-30
IGP40N65F5,IGW40N65F5
Highspeedswitchingseriesfifthgeneration
TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing PG-TO220-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Package Drawing PG-TO247-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3 Rev.2.1,2015-04-30
IGP40N65F5,IGW40N65F5
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C Pulsedcollectorcurrent,tplimitedbyTvjmax
VCE IC ICpuls
650
74.0 46.0 120.0
V A A
Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs
-
120.0
A
Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) PowerdissipationTC=25°C PowerdissipationTC=100°C Operating junction temperature Storage temperature
VGE
Ptot Tvj Tstg
±20 ±30
250.0 125.0
-40...+175
-55...+150
V
W °C °C
Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s
PG-TO220-3 PG-TO247-3
260 °C 260
Mounting torque, M3 screw Maximum of mounting processes: 3
M
0.6 Nm
ThermalResistance
Parameter Characteristic
IGBT thermal resistance, junction - case
Thermal resistance junction - ambient
Symbol Conditions
Rth(j-c) Rth(j-a)
PG-TO220-3 PG-TO247-3
Max.Value
Unit
0.60 K/W
62 40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current Transconductance
IGES gfs
VGE=0V,IC=0.20mA VGE=15.0V,IC=40.0A Tvj=25°C Tvj=125°C Tvj=175°C IC=0.40mA,VCE=VGE VCE=650V,VGE=0V Tvj=25°C Tvj=175°C VCE=0V,VGE=20V VCE=20V,IC=40.0A
Value Unit
min. typ. max.
650 -
-V
-
1.60 2.10 1.80 -
V
- 1.90 -
3.2 4.0 4.8 V
- - 40.0 µA - - 2000.0
- - 100 nA
- 50.0 - S
4 Rev.2.1,2015-04-30
IGP40N65F5,IGW40N65F5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unl.