22N20

UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary 22A, 200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 22N20 is universally applied in low voltage such as automotive, high efficiency switching for DC/DC converters and DC motor control.  FEATURES * Fast switching * RDS(on) < 0.14Ω @ VGS = 10 V, ID=11A * Typically 20nC low gate charge * 100% avalanche tested * Typically 25pF Low CRSS * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 22N20L-TA3-T 22N20G-TA3-T 22N20L-TF3-T 22N20G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F Pin Assignment 123 GDS GDS Packing Tube Tube www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-611.e 22N20  MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-611.e 22N20 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous (TC=25°C) Pulsed (Note 2) ID IDM 22...