Document
UNISONIC TECHNOLOGIES CO., LTD
10N15
Preliminary
10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS
1
DESCRIPTION
The UTC 10N15 is an N-channel enhancement mode silicon-gate power field effect transistors, it uses UTC’s advanced technology to provide the customers with high breakdown voltage etc.
The UTC 10N15 is suitable for switching converters, switching regulators, relay drivers and motor drivers, etc.
1
Power MOSFET
TO-220 TO-220F1
FEATURES
* RDS(ON)<0.3Ω @VGS=10V, ID=10A * High breakdown voltage
1 TO - 252
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
10N15L-TA3-T
10N15G-TA3-T
TO-220
10N15L-TF1-T
10N15G-TF1-T
TO-220F1
10N15L-TN3-T
10N15G-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS GDS GDS
Packing
Tube Tube Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
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10N15
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 1)
VDSS 150 V
Drain-Gate Voltage (RGS=20kΩ) (TJ=25~125°C)
VDGR
150
V
Gate-Source Voltage
VGSS ±20 V
Drain Current
Continuous Pulsed
ID IDM
10 25 (Note 2)
A A
TO-220
100 W
Power Dissipation
TO-220F1
PD
62 W
TO-252
54 W
TO-220
0.8 W/°C
Linear Derating Factor
TO-220F1
0.48 W/°C
TO-252
0.43 W/°C
Junction Temperature Storage Temperature Range
TJ TSTG
-55~+150 -55~+150
°C °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width is limited by maximum junction temperature.
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-220/TO-220F1 TO-252
θJA
62.5 110
°С/W
TO-220
1.25
Junction to Case
TO-220F1
θJC
2 °С/W
TO-252
2.3
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source
Forward
Leakage Current Reverse
BVDSS IDSS
IGSS
ID=250µA, VGS=0V VDS=Rated BVDSS, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 1) Drain-Source On Voltage (Note 1)
VGS(TH) RDS(ON) VDS(ON)
VDS=VGS, ID=250µA VGS=10V, ID=10A VGS=10V, ID=10A
DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time
tD(ON) tR
tD(OFF) tF
VDD=75V, VGS=10V,ID≈5A, RG=50Ω, RL=14.7Ω
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage (Note 1)
VSD ISD=5A
Diode Reverse Recovery Time
tRR ISD=4A, dlSD/dt=100A/µs
Note: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
MIN TYP MAX UNIT
150 V 1 µA
+100 nA -100 nA
2 4V 0.3 Ω 3.0 V
850 pF 230 pF 100 pF
40 60 165 250 90 135 90 135
ns ns ns ns
1.4 V 200 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
10V
RG RD
VGS
VDS
DUT
Resistive Switching Test Circuit
VDS 90%
10%
VGS
td(ON) tR tON
td(OFF) tF tOFF
Resistive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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10N15
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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