Document
BAP70Q
Quad PIN diode attenuator
Rev. 2 — 6 March 2012
Product data sheet
1. Product profile
1.1 General description
Quad PIN diode in a SOT753 package.
1.2 Features and benefits
4 PIN diodes in a SOT753 package 300 kHz to 4 GHz High linearity Low insertion loss reduction in part count Low diode capacitance Low diode forward resistance
1.3 Applications
Broadband system applications i.e. WCDMA, CATV, etc. General purpose Voltage Controlled Attenuators for high linearity applications
2. Pinning information
Table 1. Discrete pinning Pin Description 1 RF in 2 series bias 3 RF out 4 shunt 1 bias 5 shunt 2 bias
Simplified outline Graphic symbol
54 5 4
123
123 sym142
3. Ordering information
Table 2. Ordering information
Type number Package
Name Description
BAP70Q
SC-74A plastic surface-mounted package; 5 leads
Version SOT753
NXP Semiconductors
BAP70Q
Quad PIN diode attenuator
4. Marking
Table 3. Marking Type number BAP70Q
Marking code A2
5. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VR reverse voltage IF forward current Ptot total power dissipation Tstg storage temperature
Tsp = 90 C
[1] [1] [1] -
65
Tj junction temperature
65
[1] single diode.
Max 50 100 125 +150 +150
Unit V mA mW C C
6. Thermal characteristics
Table 5. Symbol Rth(j-sp)
Thermal characteristics Parameter thermal resistance from junction to solder point
7. Characteristics
Conditions Typ Unit 350 K/W
BAP70Q
Product data sheet
Table 6. Characteristics Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF forward voltage
IF = 50 mA
IR reverse current
VR = 50 V
Cd diode capacitance
see Figure 1; f = 1 MHz;
VR = 0 V
VR = 1 V
VR = 20 V
rD diode forward resistance see Figure 2; f = 100 MHz;
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
L charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 ; measured at IR = 3 mA
Min Typ
- 0.95 --
- 600 - 430 - 250
- 77 - 40 - 5.4 - 1.4 - 1.25
Max Unit
1.1 V 100 nA
- fF - fF 300 fF
100 50 7 1.9 - s
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
2 of 13
NXP Semiconductors
BAP70Q
Quad PIN diode attenuator
600 Cd (fF)
500
400
300
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103 rD (Ω) 102
10
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200 0
5 10 15 20 VR (V)
Fig 1.
f = 1 MHz; Tj = 25 C.
Diode capacitance as a function of reverse voltage; typical values.
1 10−1
1
10 102 IF (mA)
Fig 2.
f = 100 MHz; Tj = 25 C.
Diode forward resistance as a function of forward current; typical values.
BAP70Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
3 of 13
NXP Semiconductors
8. Application information
8.1 Application circuit
BAP70Q
Quad PIN diode attenuator
RFin/out C2
R3
32
BAP70Q
4
R1 R4
R5
C1
Vctrl 1 C3 RFin/out
5
R2
C4 R6
C5
VCC
Fig 3. Wideband Quad PIN diode attentuator circuit
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Table 7. List of components used for the typical application
Component
Description
Conditions
C1, C2, C3, C4, C5 R1, R2 R3 R4, R5 R6
chip capacitor chip resistor chip resistor chip resistor chip resistor
VCC = 3.7 V VCC = 5 V VCC = 3.7 V VCC = 5 V VCC = 3.7 V VCC = 5 V VCC = 3.7 V VCC = 5 V VCC = 3.7 V VCC = 5 V
Value 47 nF 47 nF 560 910 330 1000 1500 2000 680 1000
BAP70Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
4 of 13
NXP Semiconductors
BAP70Q
Quad PIN diode attenuator
8.2 Quad PIN pi attentuator characteristics
Table 8. Typical performance for BAP70Q quad PIN diode attenuator VCC = 3.7 V; Tamb = 25 C unless otherwise specified.
Symbol Parameter
Test Conditions
Typ
Lins insertion loss
VC = 10 V; f = 1 GHz
RLin input return loss
VC = 0 V; f = 1 GHz
attenuation
VC = 0 V; f = 1 GHz
IP3i input third-order intercept point f = 0.1 GHz
Vctrl = 2 V
Vctrl = 10 V
f = 0.9 GHz
3 24 44
38 45
Vctrl = 2 V Vctrl = 10 V f = 1.8 GHz
45 45
Vctrl = 2 V Vctrl = 10 V f = 2.1 GHz
45 45
Vctrl = 2 V Vctrl = 10 V
44 44
Units dB dB dB
dBm dBm
dBm dBm
dBm dBm
dBm dBm
BAP70Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
5 of 13
NXP Semiconductors
BAP70Q
Quad PIN diode attenuator
0
Lins (dB)
−20
(8) (7) (6)
(5) (4)
−40 (3)
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(10) (9)
(2)
−60
(1)
−80 10
102 103 104 f (MHz)
VCC = 3.7 V; Tamb = 25 C. (1) Vctrl = 0 V (2) Vctrl = 1 V (3) Vctrl = 1.1 V (4) Vctrl = 1.2 V (5) Vctrl = 1.3 V (6) Vctrl = 1.5 V (7) Vctrl = 2 V (8) Vctrl = 4 V (9) Vctrl = 7.5 V (10) Vctrl = 10 V
Fig 4. Insertion loss as function of frequency; typical values
BAP70Q
Product data sheet
All information provided in.