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BAP70Q Dataheets PDF



Part Number BAP70Q
Manufacturers NXP
Logo NXP
Description Quad PIN diode attenuator
Datasheet BAP70Q DatasheetBAP70Q Datasheet (PDF)

BAP70Q Quad PIN diode attenuator Rev. 2 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description Quad PIN diode in a SOT753 package. 1.2 Features and benefits  4 PIN diodes in a SOT753 package  300 kHz to 4 GHz  High linearity  Low insertion loss  reduction in part count  Low diode capacitance  Low diode forward resistance 1.3 Applications  Broadband system applications i.e. WCDMA, CATV, etc.  General purpose Voltage Controlled Attenuators for high linearity app.

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BAP70Q Quad PIN diode attenuator Rev. 2 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description Quad PIN diode in a SOT753 package. 1.2 Features and benefits  4 PIN diodes in a SOT753 package  300 kHz to 4 GHz  High linearity  Low insertion loss  reduction in part count  Low diode capacitance  Low diode forward resistance 1.3 Applications  Broadband system applications i.e. WCDMA, CATV, etc.  General purpose Voltage Controlled Attenuators for high linearity applications 2. Pinning information Table 1. Discrete pinning Pin Description 1 RF in 2 series bias 3 RF out 4 shunt 1 bias 5 shunt 2 bias Simplified outline Graphic symbol 54 5 4 123 123 sym142 3. Ordering information Table 2. Ordering information Type number Package Name Description BAP70Q SC-74A plastic surface-mounted package; 5 leads Version SOT753 NXP Semiconductors BAP70Q Quad PIN diode attenuator 4. Marking Table 3. Marking Type number BAP70Q Marking code A2 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VR reverse voltage IF forward current Ptot total power dissipation Tstg storage temperature Tsp = 90 C [1] [1] [1] - 65 Tj junction temperature 65 [1] single diode. Max 50 100 125 +150 +150 Unit V mA mW C C 6. Thermal characteristics Table 5. Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point 7. Characteristics Conditions Typ Unit 350 K/W BAP70Q Product data sheet Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Per diode VF forward voltage IF = 50 mA IR reverse current VR = 50 V Cd diode capacitance see Figure 1; f = 1 MHz; VR = 0 V VR = 1 V VR = 20 V rD diode forward resistance see Figure 2; f = 100 MHz; IF = 0.5 mA IF = 1 mA IF = 10 mA IF = 100 mA L charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 ; measured at IR = 3 mA Min Typ - 0.95 -- - 600 - 430 - 250 - 77 - 40 - 5.4 - 1.4 - 1.25 Max Unit 1.1 V 100 nA - fF - fF 300 fF 100  50  7 1.9  - s All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 2 of 13 NXP Semiconductors BAP70Q Quad PIN diode attenuator 600 Cd (fF) 500 400 300 001aam719 103 rD (Ω) 102 10 001aam720 200 0 5 10 15 20 VR (V) Fig 1. f = 1 MHz; Tj = 25 C. Diode capacitance as a function of reverse voltage; typical values. 1 10−1 1 10 102 IF (mA) Fig 2. f = 100 MHz; Tj = 25 C. Diode forward resistance as a function of forward current; typical values. BAP70Q Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 3 of 13 NXP Semiconductors 8. Application information 8.1 Application circuit BAP70Q Quad PIN diode attenuator RFin/out C2 R3 32 BAP70Q 4 R1 R4 R5 C1 Vctrl 1 C3 RFin/out 5 R2 C4 R6 C5 VCC Fig 3. Wideband Quad PIN diode  attentuator circuit 001aam673 Table 7. List of components used for the typical application Component Description Conditions C1, C2, C3, C4, C5 R1, R2 R3 R4, R5 R6 chip capacitor chip resistor chip resistor chip resistor chip resistor VCC = 3.7 V VCC = 5 V VCC = 3.7 V VCC = 5 V VCC = 3.7 V VCC = 5 V VCC = 3.7 V VCC = 5 V VCC = 3.7 V VCC = 5 V Value 47 nF 47 nF 560  910  330  1000  1500  2000  680  1000  BAP70Q Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 4 of 13 NXP Semiconductors BAP70Q Quad PIN diode attenuator 8.2 Quad PIN pi attentuator characteristics Table 8. Typical performance for BAP70Q quad PIN diode  attenuator VCC = 3.7 V; Tamb = 25 C unless otherwise specified. Symbol Parameter Test Conditions Typ Lins insertion loss VC = 10 V; f = 1 GHz RLin input return loss VC = 0 V; f = 1 GHz  attenuation VC = 0 V; f = 1 GHz IP3i input third-order intercept point f = 0.1 GHz Vctrl = 2 V Vctrl = 10 V f = 0.9 GHz 3 24 44 38 45 Vctrl = 2 V Vctrl = 10 V f = 1.8 GHz 45 45 Vctrl = 2 V Vctrl = 10 V f = 2.1 GHz 45 45 Vctrl = 2 V Vctrl = 10 V 44 44 Units dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm BAP70Q Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 5 of 13 NXP Semiconductors BAP70Q Quad PIN diode attenuator 0 Lins (dB) −20 (8) (7) (6) (5) (4) −40 (3) 001aam674 (10) (9) (2) −60 (1) −80 10 102 103 104 f (MHz) VCC = 3.7 V; Tamb = 25 C. (1) Vctrl = 0 V (2) Vctrl = 1 V (3) Vctrl = 1.1 V (4) Vctrl = 1.2 V (5) Vctrl = 1.3 V (6) Vctrl = 1.5 V (7) Vctrl = 2 V (8) Vctrl = 4 V (9) Vctrl = 7.5 V (10) Vctrl = 10 V Fig 4. Insertion loss as function of frequency; typical values BAP70Q Product data sheet All information provided in.


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