FDD86113LZ

FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A „ Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A „ HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package Application „ DC-DC conversion „ 100% UIL Tested „ RoHS Compliant G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous TC = 25 °C TA = 25 °C -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 100 ±20 5.5 4.2 15 12 29 3.1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, J...