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FDD10N20LZ

Fairchild Semiconductor
Part Number FDD10N20LZ
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Feb 15, 2016
Detailed Description FDD10N20LZ — N-Channel UniFETTM MOSFET FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 mΩ Features • RDS(on) = 3...
Datasheet PDF File FDD10N20LZ PDF File

FDD10N20LZ
FDD10N20LZ

Overview
FDD10N20LZ — N-Channel UniFETTM MOSFET FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.
6 A, 360 mΩ Features • RDS(on) = 300 mΩ (Typ.
) @ VGS = 10 V, ID = 3.
8 A • Low Gate Charge (Typ.
12 nC) • Low Crss (Typ.
11 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
This device family is suitable for s...


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