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FDB024N08BL7

Fairchild Semiconductor
Part Number FDB024N08BL7
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Feb 15, 2016
Detailed Description FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ F...
Datasheet PDF File FDB024N08BL7 PDF File

FDB024N08BL7
FDB024N08BL7


Overview
FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.
4 mΩ Features • RDS(on) = 1.
7 mΩ ( Typ.
) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) *QG • Low Reverse Recovery Charge, Qrr = 112 nC • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification • Fast Switching Speed • RoHS Compliant • Qualified according to JEDEC Standards JESD22-A113F and IPC/JEDEC J-STD-020D.
1 Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchrono...



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