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UK3568

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Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UK3568 SILICON N-CHANNEL MOS TYPE „ DESCRIPTION The UK3568 uses advanced trench technol...


UTC

UK3568

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Description
UNISONIC TECHNOLOGIES CO., LTD UK3568 SILICON N-CHANNEL MOS TYPE „ DESCRIPTION The UK3568 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON) =0.4Ω * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified „ SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UK3568L-TF1-T UK3568G-TF1-T UK3568L-TF2-T UK3568G-TF2-T UK3568L-TF3-T UK3568G-TF3-T Package TO-220F1 TO-220F2 TO-220F Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-263.E UK3568 Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Drain-Gate Voltage (RG=20kΩ) VDSS 500 V VDGR 500 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (Note 2) DC Pulse(t=1ms) ID 12 48 A Avalanche Current IAR 12 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 4) EAS EAR 364 4 mJ Power Dissipation (TC=25°C) TO-220F/TO-220F1 TO-220F2 PD 40 42 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only ...




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