Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UK3568
SILICON N-CHANNEL MOS TYPE
DESCRIPTION
The UK3568 uses advanced trench technol...
Description
UNISONIC TECHNOLOGIES CO., LTD UK3568
SILICON N-CHANNEL MOS TYPE
DESCRIPTION
The UK3568 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) =0.4Ω * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UK3568L-TF1-T
UK3568G-TF1-T
UK3568L-TF2-T
UK3568G-TF2-T
UK3568L-TF3-T
UK3568G-TF3-T
Package
TO-220F1 TO-220F2 TO-220F
Pin Assignment 123 GDS GDS GDS
Packing
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1 of 5
QW-R502-263.E
UK3568
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Drain-Gate Voltage (RG=20kΩ)
VDSS 500 V VDGR 500 V
Gate-Source Voltage
VGSS ±30 V
Continuous Drain Current (Note 2)
DC Pulse(t=1ms)
ID
12 48
A
Avalanche Current
IAR 12 A
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 4)
EAS EAR
364 4
mJ
Power Dissipation (TC=25°C)
TO-220F/TO-220F1 TO-220F2
PD
40 42
W
Junction Temperature Storage Temperature
TJ TSTG
+150 -55 ~ +150
°C °C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only ...
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