IPLU300N04S4-R8
OptiMOS™-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C...
IPLU300N04S4-R8
OptiMOS™-T2 Power-
Transistor
Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant); 100% lead free Ultra low Rds(on) 100% Avalanche tested
Product Summary VDS RDS(on) ID
40 V 0.77 mW 300 A
H-PSOF-8-1 Tab
8
1
Tab
1 8
Type IPLU300N04S4-R8
Package H-PSOF-8-1
Marking 4N04R8
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=10V1)
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2)
E AS
I D=150 A
Avalanche current, single pulse
I AS
-
Gate source voltage
V GS
-
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg -
Value
Unit
300
A
300
1200
750
mJ
300
A
±20
V
429
W
-55 ... +175
°C
Rev. 1.1
page 1
2015-10-06
IPLU300N04S4-R8
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
-
-
0.35 K/W
-
-
62
-
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS
V GS=0 V, I D=1 mA
40
V GS(th) V DS=V GS, I D=230 µA
...
