IPG16N10S4-61A
OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualif...
IPG16N10S4-61A
OptiMOS™-T2 Power-
Transistor
Features Dual N-channel Normal Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature RoHS compliant 100% Avalanche tested Feasible for automatic optical inspection (AOI)
Product Summary VDS RDS(on),max3) ID
100 V 61 mW 16 A
PG-TDSON-8-10
Type IPG16N10S4-61A
Package
Marking
PG-TDSON-8-10 4N1061
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
ID
T C=25 °C, V GS=10 V
Pulsed drain current1) one channel active
Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage
Power dissipation one channel active
T C=100 °C, V GS=10 V1)
I D,pulse -
E AS I AS V GS
I D=8A -
P tot
T C=25 °C
Operating and storage temperature T j, T stg Rev. 1.2
page 1
Value 16
11
64 33 10 ±20 29 -55 ... +175
Unit A
mJ A V W °C
2022-07-28
IPG16N10S4-61A
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area2)
Values
Unit
min. typ. max.
-
-
5.2 K/W
-
100
-
-
60
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current3)
V (BR)DSS V GS=0V, I D=1mA
100
V GS(th) V DS=V GS, I D=9µA
2.0
I DSS
V DS=100V, V GS=0V, T j=25...
