IPC045N10N3

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC045N10N3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC045N10N3 1Description N-channelenhancementmode FordynamiccharacterizationrefertothedatasheetofIPP180N10N3G AQL0.65forvisualinspectionaccordingtofailurecatalogue ElectrostaticDischargeSensitiveDeviceaccordingtoJEDEC Diebond:solderedorglued Backsidemetallization:NiVsystem Frontsidemetallization:AlCusystem Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 100 18.01) 2.5 x 1.8 V mΩ mm2 Thickness 220 µm Drain Gate Source Type/OrderingCode IPC045N10N3 Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min. 100 2 - Values Typ. Max. -2.7 3.5 0.01 1 1 100 15.22) 1003) 1.0 1.2 454) - Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=33µA µA VGS=0V,VDS=100V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A mJ ID =30...