OptiMOS™-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
OptiMOS™-T2 Power-
Transistor
Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06
Product Summary V DS R DS(on),max (SMD version) ID
80 V 5.5 mW 80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80N08S4-06 IPI80N08S4-06 IPP80N08S4-06
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0806 4N0806 4N0806
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=40A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value 80
80
320 270 75 ±20 150 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.0
page 1
2014-06-20
IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
-
- - 1.0 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage d...
