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IPB80N08S4-06

Part Number	IPB80N08S4-06
Manufacturer	Infineon
Description	Power-Transistor
Published	Feb 15, 2016
Detailed Description	OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
Datasheet	IPB80N08S4-06 PDF File

Overview

OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 Product Summary V DS R DS(on),max (SMD version) ID 80 V 5.
5 mW 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N08S4-06 IPI80N08S4-06 IPP80N08S4-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0806 4N0806 4N0806 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, singl...

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IPB80N08S4-06 Power-Transistor - Infineon

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