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IPB180N10S4-03

Infineon
Part Number IPB180N10S4-03
Manufacturer Infineon
Description Power-Transistor
Published Feb 15, 2016
Detailed Description OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C ...
Datasheet PDF File IPB180N10S4-03 PDF File

IPB180N10S4-03
IPB180N10S4-03

Overview
OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB180N10S4-03 Product Summary VDS RDS(on) ID 100 V 3.
3 mW 180 A PG-TO263-7-3 Type IPB180N10S4-03 Package PG-TO263-7-3 Marking 4N1003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C...


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