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IPB160N08S4-03

Infineon
Part Number IPB160N08S4-03
Manufacturer Infineon
Description Power-Transistor
Published Feb 15, 2016
Detailed Description OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
Datasheet PDF File IPB160N08S4-03 PDF File

IPB160N08S4-03
IPB160N08S4-03

Overview
OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB160N08S4-03 Product Summary V DS R DS(on),max ID 80 V 3.
2 mW 160 A PG-TO263-7-3 Type IPB160N08S4-03 Package PG-TO263-7-3 Marking 4N0803 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C ...


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