IPA060N06N
MOSFET
OptiMOSTMPower-Transistor,60V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec. •10...
IPA060N06N
MOSFET
OptiMOSTMPower-
Transistor,60V
Features
OptimizedforhighperformanceSMPS,e.g.sync.rec. 100%avalanchetested Superiorthermalresistance N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
6.0
mΩ
ID 45 A
QOSS
32
nC
QG(0V..10V)
27
nC
TO-220-FP
Gate Pin 1
Drain Pin 2
Source Pin 3
Type/OrderingCode IPA060N06N
Package PG-TO220-FP
Marking 060N06N
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
Rev.2.2,2016-08-10
OptiMOSTMPower-
Transistor,60V
IPA060N06N
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....