Document
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V IPA029N06N
DataSheet
Rev.2.2 Final
PowerManagement&Multimarket
1Description
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
2.9
mΩ
ID 84 A
QOSS
65
nC
QG(0V..10V)
56
nC
OptiMOSTMPower-Transistor,60V IPA029N06N
TO-220-FP
Gate Pin 1
Drain Pin 2
Source Pin 3
Type/OrderingCode IPA029N06N
Package PG-TO220-FP
Marking 029N06N
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
2
Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V
IPA029N06N
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
3 Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V IPA029N06N
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current1) Avalanche energy, single pulse2) Gate source voltage Power dissipation
Operating and storage temperature
ID
ID,pulse EAS VGS Ptot
Tj,Tstg
Min. -20 -
-55
Values Typ. Max. - 84 - 59 - 336 - 140 - 20 - 38
- 175
Unit Note/TestCondition
A
VGS=10V,TC=25°C VGS=10V,TC=100°C
A TC=25°C mJ ID=84A,RGS=25Ω
V-
W TC=25°C
°C
IEC climatic category; DIN IEC 68-1: 55/175/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Min. -
Values Typ. Max. 2.9 3.9
Unit Note/TestCondition K/W -
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance3) Transconductance
V(BR)DSS VGS(th)
IDSS
IGSS
RDS(on)
RG gfs
Min. 60 2.1
-
-
-
0.65 75
Values Typ. Max. --
2.8 3.3
0.1 1 10 100
10 100
2.6 2.9 3.0 3.5
1.3 1.95
150 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=75µA
µA
VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=84A VGS=6V,ID=21A
Ω-
S |VDS|>2|ID|RDS(on)max,ID=84A
1) See figure 3 for more detailed information 2) See figure 13 for more detailed information 3) Defined by design. Not subject to production test Final Data Sheet
4
Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V IPA029N06N
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance Output capacitance Reverse transfer capacitance
Turn-on delay time
Ciss Coss Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min. -
-
-
-
Values Typ. Max. 4100 5125 980 1225 39 78 16 -
15 -
30 -
11 -
Unit Note/TestCondition
pF VGS=0V,VDS=30V,f=1MHz
pF VGS=0V,VDS=30V,f=1MHz
pF VGS=0V,VDS=30V,f=1MHz
ns
VDD=30V,VGS=10V,ID=84A, RG,ext=3Ω
ns
VDD=30V,VGS=10V,ID=84A, RG,ext=3Ω
ns
VDD=30V,VGS=10V,ID=84A, RG,ext=3Ω
ns
VDD=30V,VGS=10V,ID=84A, RG,ext=3Ω
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge Gate charge at threshold Gate to drain charge1) Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge1)
Qgs Qg(th) Qgd Qsw Qg Vplateau Qg(sync) Qoss
Min. -
Values Typ. Max. 19 11 10 15 18 56 66 4.7 49 65 82
Unit Note/TestCondition
nC VDD=30V,ID=84A,VGS=0to10V nC VDD=30V,ID=84A,VGS=0to10V nC VDD=30V,ID=84A,V.