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SIGC128T170R3E

Infineon
Part Number SIGC128T170R3E
Manufacturer Infineon
Description IGBT
Published Feb 14, 2016
Detailed Description SIGC128T170R3E IGBT3 Power Chip Features:  1700V Trench & Field Stop technology  low turn-off losses  short tail cu...
Datasheet PDF File SIGC128T170R3E PDF File

SIGC128T170R3E
SIGC128T170R3E

Overview
SIGC128T170R3E IGBT3 Power Chip Features:  1700V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC Die Size SIGC128T170R3E 1700V 100A 11.
33 x 11.
33 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 11.
33 x 11.
33 8 x ( 4.
48 x 2.
15 ) 1.
303 x 0.
838 mm2 128.
4 190 µm 200 mm 198 Photoimi...


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