Si7658ADP

New Product N-Channel 30-V (D-S) MOSFET Si7658ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0022 at VGS = 10 V 30 0.0028 at VGS = 4.5 V ID (A)a, g 60g 60g Qg (Typ.) 34 nC FEATURES Halogen-free TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % Avalanche Tested RoHS COMPLIANT PowerPAK® SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 APPLICATIONS Low-Side Switch for DC/DC Converters - Servers - POL - VRM D OR-ing G Bottom View Ordering Information: Si7658ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Soldering Recommendations (Peak Temperature)d, e S N-Channel MOSFET Limit 30 ± 20 60g 60g 36b, c 29b, c 80 60g 4.9b, c 50 125 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 18 1.0 23 °C/W 1.5 Notes: a. Based on TC ...