SI2304DDS

New Product N-Channel 30-V (D-S) MOSFET Si2304DDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.060 at VGS = 10 V 30 0.075 at VGS = 4.5 V ID (A)a 3.6 3.6 Qg (Typ.) 2.1 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter TO-236 (SOT-23) G1 S2 3D Top View Si2304DDS (P4)* * Marking Code Ordering Information: Si2304DDS-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e VDS VGS ID IDM IS PD TJ, Tstg Limit 30 ± 20 3.6a 3.3 3.3 2.7 15 1.4 0.9b, c 1.7 1.1 1.1b, c 0.7b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t≤5s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 130 °C/W. Symbol RthJA RthJF Typical 90 60 Maximum 115 75 Unit °C/W Document Number: 65175 S09-1496-Rev. A, 10...