Document
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª3Power-Transistor,40V IPA041N04NG
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
•OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 40
V
RDS(on),max
4.1
mΩ
ID 70 A
OptiMOSª3Power-Transistor,40V IPA041N04NG
TO-220-FP
Gate Pin 1
Drain Pin 2
Source Pin 3
Type/OrderingCode IPA041N04N G
Package PG-TO220-FP
Marking 041N04N
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
2
Rev.2.0,2014-03-12
OptiMOSª3Power-Transistor,40V
IPA041N04NG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3 Rev.2.0,2014-03-12
OptiMOSª3Power-Transistor,40V IPA041N04NG
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
at 25 °C Parameter
Symbol
Continuous drain current
Pulsed drain current 1) Avalanche current, single pulse 2) Avalanche energy, single pulse Gate source voltage Power dissipation
Operating and storage temperature
ID
ID,pulse IAS EAS VGS Ptot
Tj,Tstg
Min. -20 -
-55
Values Typ. Max. - 70 - 49 - 280 - 70 - 70 - 20 - 35
- 175
Unit Note/TestCondition
A
VGS=10V,TC=25°C VGS=10V,TC=100°C
A TC=25°C A TC=25°C mJ ID=70A,RGS=25Ω
V-
W TC=25°C
°C
IEC climatic category; DIN IEC 68-1: 55/175/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
SMD version, device on PCB, minimal footprint
SMD version, device on PCB, 6 cm² cooling area 3)
RthJC RthJA
RthJA
Min. -
Values Typ. Max. - 4.3
Unit Note/TestCondition K/W -
- - 62 K/W -
- - 40 K/W -
1) See figure 3 for more detailed information 2) See figure 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Final Data Sheet
4 Rev.2.0,2014-03-12
OptiMOSª3Power-Transistor,40V IPA041N04NG
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance 1) Gate resistance Transconductance
V(BR)DSS VGS(th)
IDSS
IGSS RDS(on) RG gfs
Min. 40 2 48
Values Typ. Max. --4 0.1 1 10 100 10 100 3.5 4.1 1.6 2.4 96 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=45µA
µA
VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ VGS=10V,ID=70A
Ω-
S |VDS|>2|ID|RDS(on)max,ID=70A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance Output capacitance Reverse transfer capacitance
Turn-on delay time
Ciss Coss Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min. -
-
-
-
Values Typ. Max. 3400 4500 980 1300 36 72 16 -
3.8 -
23 -
4.8 -
Unit Note/TestCondition
pF VGS=0V,VDS=20V,f=1MHz
pF VGS=0V,VDS=20V,f=1MHz
pF VGS=0V,VDS=20V,f=1MHz
ns
VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω
ns
VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω
ns
VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω
ns
VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau vol.