Document
TRENCHSTOP™ Series
IKP06N60T p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for :
- Variable Speed Drive for washing machines, air conditioners and induction cooking
- Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution - high ruggedness, temperature stable behaviour
Low EMI Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C G
E
PG-TO220-3
Type IKP06N60T
VCE 600V
IC;Tc=100°C VCE(sat),Tj=25°C Tj,max
6A
1.5V
175C
Marking K06T60
Package PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature
Storage temperature
Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol VCE
IC
ICpuls -
IF
IFpuls VGE tSC
Ptot Tj Tstg
1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Value 600
12 6 18 18
12 6 18 20
5
88
-40...+175 -55...+150
260
Unit V
A
V s W C
Rev. 2.5 20.09.2013
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient
TRENCHSTOP™ Series
Symbol
RthJC RthJCD RthJA
Conditions
IKP06N60T p
Max. Value
1.7 2.6 62
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate-emitter leakage current Transconductance Integrated gate resistor
V(BR)CES VCE(sat)
VF
VGE(th) ICES
VGE=0V, IC=0.25mA VGE = 15V, IC=6A Tj=25C Tj=175C VGE=0V, IF=6A Tj=25C Tj=175C IC=0.18mA, VCE=VGE VCE=600V, VGE=0V Tj=25C Tj=175C
IGES gfs RGint
VCE=0V,VGE=20V VCE=20V, IC=6A
min.
Value typ.
Unit max.
600 -
-V
- 1.5 2.05 - 1.8
- 1.6 2.05 - 1.6 4.1 4.6 5.7
µA
- - 40
- - 700
- - 100 nA
- 3.6 - S
none
Ω
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
- 368 - pF
Output capacitance
Coss
VGE=0V,
- 28 -
Reverse transfer capacitance
Crss
f=1MHz
- 11 -
Gate charge
QGate
VCC=480V, IC=6A
-
42
- nC
VGE=15V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
- 7 - nH
Short circuit collector current1)
IC(SC)
VGE=15V,tSC5s
-
55
-A
VCC = 400V,
Tj = 25C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.5 20.09.2013
TRENCHSTOP™ Series
IKP06N60T p
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during tb
td(on) tr td(off) tf Eon Eoff Ets
trr Qrr Irrm dirr/dt
Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF
L, C from Fig. E Energy losses include “tail” and diode reverse recovery.
Tj=25C, VR=400V, IF=6A, diF/dt=550A/s
min.
-
-
Value typ.
9 6 130 58 0.09 0.11 0.2
123 190 5.3 450
Unit max.
- ns - mJ -
- ns - nC -A - A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during tb
td(on) tr td(off) tf Eon Eoff Ets
trr Qrr Irrm dirr/dt
Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF
L, C from Fig. E Energy losses include “tail” and diode reverse recovery.
Tj=175C VR=400V, IF=6A, diF/dt=550A/s
min.
-
-
Value typ.
9 8 165 84 0.14 0.18 0.335
180 500 7.6 285
Unit max.
- ns - mJ -
- ns - nC -A - A/s
IFAG IPC TD VLS
3
Rev. 2.5 20.09.2013
IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT
TRENCHSTOP™ Series
IKP06N60T p
18A
15A 12A
9A
TC=80°C TC=1.