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IKP06N60T Dataheets PDF



Part Number IKP06N60T
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet IKP06N60T DatasheetIKP06N60T Datasheet (PDF)

TRENCHSTOP™ Series IKP06N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter.

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TRENCHSTOP™ Series IKP06N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behaviour  Low EMI  Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO220-3 Type IKP06N60T VCE 600V IC;Tc=100°C VCE(sat),Tj=25°C Tj,max 6A 1.5V 175C Marking K06T60 Package PG-TO220-3 Maximum Ratings Parameter Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj Tstg 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Value 600 12 6 18 18 12 6 18 20 5 88 -40...+175 -55...+150 260 Unit V A V s W C Rev. 2.5 20.09.2013 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient TRENCHSTOP™ Series Symbol RthJC RthJCD RthJA Conditions IKP06N60T p Max. Value 1.7 2.6 62 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Integrated gate resistor V(BR)CES VCE(sat) VF VGE(th) ICES VGE=0V, IC=0.25mA VGE = 15V, IC=6A Tj=25C Tj=175C VGE=0V, IF=6A Tj=25C Tj=175C IC=0.18mA, VCE=VGE VCE=600V, VGE=0V Tj=25C Tj=175C IGES gfs RGint VCE=0V,VGE=20V VCE=20V, IC=6A min. Value typ. Unit max. 600 - -V - 1.5 2.05 - 1.8 - 1.6 2.05 - 1.6 4.1 4.6 5.7 µA - - 40 - - 700 - - 100 nA - 3.6 - S none Ω Dynamic Characteristic Input capacitance Ciss VCE=25V, - 368 - pF Output capacitance Coss VGE=0V, - 28 - Reverse transfer capacitance Crss f=1MHz - 11 - Gate charge QGate VCC=480V, IC=6A - 42 - nC VGE=15V Internal emitter inductance LE measured 5mm (0.197 in.) from case - 7 - nH Short circuit collector current1) IC(SC) VGE=15V,tSC5s - 55 -A VCC = 400V, Tj = 25C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 2 Rev. 2.5 20.09.2013 TRENCHSTOP™ Series IKP06N60T p Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during tb td(on) tr td(off) tf Eon Eoff Ets trr Qrr Irrm dirr/dt Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Tj=25C, VR=400V, IF=6A, diF/dt=550A/s min. - - Value typ. 9 6 130 58 0.09 0.11 0.2 123 190 5.3 450 Unit max. - ns - mJ - - ns - nC -A - A/s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during tb td(on) tr td(off) tf Eon Eoff Ets trr Qrr Irrm dirr/dt Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Tj=175C VR=400V, IF=6A, diF/dt=550A/s min. - - Value typ. 9 8 165 84 0.14 0.18 0.335 180 500 7.6 285 Unit max. - ns - mJ - - ns - nC -A - A/s IFAG IPC TD VLS 3 Rev. 2.5 20.09.2013 IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT TRENCHSTOP™ Series IKP06N60T p 18A 15A 12A 9A TC=80°C TC=1.


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