Document
IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode
IKB20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKB20N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
Applications:
•uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency
G
G
C
E
C E
KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IKB20N60H3
600V 20A
1.95V
Tvjmax 175°C
Marking K20H603
Package PG-TO263-3
2 Rev.2.3,2014-03-12
IKB20N60H3
Highspeedswitchingseriesthirdgeneration
TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3 Rev.2.3,2014-03-12
IKB20N60H3
Highspeedswitchingseriesthirdgeneration
Maximumratings
Parameter Collector-emittervoltage,Tvj≥25°C DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C Pulsedcollectorcurrent,tplimitedbyTvjmax
Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C Diodepulsedcurrent,tplimitedbyTvjmax
Gate-emitter voltage
Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C PowerdissipationTC=25°C PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020)
Symbol VCE IC ICpuls -
IF IFpuls VGE
tSC
Ptot Tvj Tstg
Value 600
40.0 20.0 80.0 80.0
20.0 10.0 80.0 ±20
5 170.0 85.0 -40...+175 -55...+150
260
Unit V A A A
A A V
µs
W °C °C °C
ThermalResistance
Parameter Characteristic
IGBT thermal resistance, junction - case
Diode thermal resistance, junction - case
Thermal resistance, min. footprint junction - ambient
Thermal resistance, 6cm² Cu on PCB junction - ambient
Symbol Conditions
Rth(j-c) Rth(j-c) Rth(j-a) Rth(j-a)
Max.Value
Unit
0.88 K/W 1.89 K/W 65 K/W 40 K/W
4 Rev.2.3,2014-03-12
IKB20N60H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current Transconductance
IGES gfs
VGE=0V,IC=2.00mA VGE=15.0V,IC=20.0A Tvj=25°C Tvj=125°C Tvj=175°C VGE=0V,IF=10.0A Tvj=25°C Tvj=125°C Tvj=175°C IC=0.29mA,VCE=VGE VCE=600V,VGE=0V Tvj=25°C Tvj=175°C VCE=0V,VGE=20V VCE=20V,IC=20.0A
min.
Value typ.
max. Unit
600 -
-V
-
1.95 2.40 2.30 -
V
- 2.50 -
-
1.65 2.05 1.67 -
V
- 1.65 -
4.1 5.1 5.7 V
- - 40.0 µA - - 1500.0
- - 100 nA
- 10.9 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance Output capacitance Reverse transfer capacitance
Cies Coes Cres
Gate charge
QG
Short circuit collector current
Max. 1000 short ci.