Document
Low Loss IGBT:
IGD06N60T
TRENCHSTOP™ Series
q
IGBT in TRENCHSTOP™ and Fieldstop technology
Features: Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution - high ruggedness, temperature stable behavior Low EMI Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications: Variable Speed Drive for washing machines and air conditioners Buck converters
C G
E
PG-TO252-3 (D-PAK)
Type IGD06N60T
VCE 600V
IC;Tc=100°C VCE(sat),Tj=25°C Tj,max
6A
1.5V
175C
Marking G06T60
Package PG-TO252-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs Gate-emitter voltage Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature
Storage temperature
Soldering temperature reflow soldering, MSL1
Symbol VCE
IC
ICpuls VGE tSC
Ptot Tj Tstg
Value 600
12 6 18 18 20
5
88 -40...+175 -55...+150
260
Unit V
A
V s W
C
1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.2, 20.09.2013
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient
IGD06N60T
TRENCHSTOP™ Series
q
Symbol RthJC RthJA
Conditions
Max. Value 1.7 62
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate-emitter leakage current Transconductance Integrated gate resistor
V(BR)CES VCE(sat)
VGE(th) ICES
IGES gfs RGint
VGE=0V, IC=0.25mA VGE = 15V, IC=6A Tj=25C Tj=175C IC=0.18mA, VCE=VGE VCE=600V, VGE=0V Tj=25C Tj=175C VCE=0V,VGE=20V VCE=20V, IC=6A
min.
Value typ.
Unit max.
600 -
-V
- 1.5 2.05 - 1.8 4.1 4.6 5.7
µA
- - 40 - - 700
- - 100 nA
- 3.6 - S
none
Ω
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
- 368 - pF
Output capacitance
Coss
VGE=0V,
- 28 -
Reverse transfer capacitance
Crss
f=1MHz
- 11 -
Gate charge
QGate
VCC=480V, IC=6A
-
42
- nC
VGE=15V
Internal emitter inductance
LE
- 7 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC5s
-
55
-A
VCC = 400V,
Tj = 25C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.2, 20.09.2013
IGD06N60T
TRENCHSTOP™ Series
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy
td(on) tr td(off) tf Eon Eoff Ets
Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF
L, C from Fig. E Energy losses include “tail” and diode reverse recovery.
Diode used IDP06E60
min.
-
Value typ.
9 6 130 58 0.09 0.11 0.2
Unit max.
- ns - mJ -
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy
td(on) tr td(off) tf Eon Eoff Ets
Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG= 23 L=60nH,C=40pF
L, C from Fig. E Energy losses include “tail” and diode reverse recovery.
Diode used IDP06E60
min.
-
Value typ.
9 8 165 84 0.14 0.18 0.335
Unit max.
- ns - mJ -
IFAG IPC TD VLS
3
Rev. 2.2, 20.09.2013
IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT
IGD06N60T
TRENCHSTOP™ Series
q
18A
15A 12A
9A
TC=80°C TC=110°C
6A Ic
3A Ic
0A 100Hz
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 23)
10A
tp=1µs 5µs
10µs
1A 50µs
500µs
0,1A 1V
5ms DC
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=0/15V)
Ptot, POWER DISSIPATION IC, COLLECTOR CURRENT
80W
15A
60W 40W 20W
10A 5A
0W 25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE Power dissipation as a function of case temperature (Tj 175C)
0A 25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE Collector current as a function of case temperature (VGE 15V, Tj 175C)
IFAG IPC TD VLS
4
Rev. 2.2, 20.09.2013
IC, COLLECTOR CURRENT
IGD06N60T
TRENCHSTOP™ Series
q
15A
VGE=20V
12A
15V
13V 9A 11V
9V
6A 7V
3A
0A 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR.