DatasheetsPDF.com

IGD06N60T Dataheets PDF



Part Number IGD06N60T
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet IGD06N60T DatasheetIGD06N60T Datasheet (PDF)

Low Loss IGBT: IGD06N60T TRENCHSTOP™ Series q IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5 V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior  Low EMI  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and.

  IGD06N60T   IGD06N60T



Document
Low Loss IGBT: IGD06N60T TRENCHSTOP™ Series q IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5 V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior  Low EMI  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications:  Variable Speed Drive for washing machines and air conditioners  Buck converters C G E PG-TO252-3 (D-PAK) Type IGD06N60T VCE 600V IC;Tc=100°C VCE(sat),Tj=25°C Tj,max 6A 1.5V 175C Marking G06T60 Package PG-TO252-3 Maximum Ratings Parameter Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature reflow soldering, MSL1 Symbol VCE IC ICpuls VGE tSC Ptot Tj Tstg Value 600 12 6 18 18 20 5 88 -40...+175 -55...+150 260 Unit V A V s W C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev. 2.2, 20.09.2013 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient IGD06N60T TRENCHSTOP™ Series q Symbol RthJC RthJA Conditions Max. Value 1.7 62 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Integrated gate resistor V(BR)CES VCE(sat) VGE(th) ICES IGES gfs RGint VGE=0V, IC=0.25mA VGE = 15V, IC=6A Tj=25C Tj=175C IC=0.18mA, VCE=VGE VCE=600V, VGE=0V Tj=25C Tj=175C VCE=0V,VGE=20V VCE=20V, IC=6A min. Value typ. Unit max. 600 - -V - 1.5 2.05 - 1.8 4.1 4.6 5.7 µA - - 40 - - 700 - - 100 nA - 3.6 - S none Ω Dynamic Characteristic Input capacitance Ciss VCE=25V, - 368 - pF Output capacitance Coss VGE=0V, - 28 - Reverse transfer capacitance Crss f=1MHz - 11 - Gate charge QGate VCC=480V, IC=6A - 42 - nC VGE=15V Internal emitter inductance LE - 7 - nH measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) VGE=15V,tSC5s - 55 -A VCC = 400V, Tj = 25C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 2 Rev. 2.2, 20.09.2013 IGD06N60T TRENCHSTOP™ Series q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Diode used IDP06E60 min. - Value typ. 9 6 130 58 0.09 0.11 0.2 Unit max. - ns - mJ - Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG= 23 L=60nH,C=40pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Diode used IDP06E60 min. - Value typ. 9 8 165 84 0.14 0.18 0.335 Unit max. - ns - mJ - IFAG IPC TD VLS 3 Rev. 2.2, 20.09.2013 IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT IGD06N60T TRENCHSTOP™ Series q 18A 15A 12A 9A TC=80°C TC=110°C 6A Ic 3A Ic 0A 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 23) 10A tp=1µs 5µs 10µs 1A 50µs 500µs 0,1A 1V 5ms DC 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=0/15V) Ptot, POWER DISSIPATION IC, COLLECTOR CURRENT 80W 15A 60W 40W 20W 10A 5A 0W 25°C 50°C 75°C 100°C 125°C 150°C Figure 3. TC, CASE TEMPERATURE Power dissipation as a function of case temperature (Tj  175C) 0A 25°C 75°C 125°C Figure 4. TC, CASE TEMPERATURE Collector current as a function of case temperature (VGE  15V, Tj  175C) IFAG IPC TD VLS 4 Rev. 2.2, 20.09.2013 IC, COLLECTOR CURRENT IGD06N60T TRENCHSTOP™ Series q 15A VGE=20V 12A 15V 13V 9A 11V 9V 6A 7V 3A 0A 0V 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR.


IGB20N60H3 IGD06N60T IGP20N60H3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)