Schottky Barrier Diode
RB161SS-30
lApplication General rectification
lDimensions (Unit : mm)
Data Sheet
lLand Size Fi...
Schottky Barrier Diode
RB161SS-30
lApplication General rectification
lDimensions (Unit : mm)
Data Sheet
lLand Size Figure (Unit : mm)
0.8
1.6±0.05 0.4±0.05
1.2±0.05
0.5 1.2
AJ
lFeatures 1) Small power mold type
(KMD2) 2) High reliability 3) Super low VF
lConstruction Silicon epitaxial planar type
0~0.03
0.8±0.05
0.6±0.03
ROHM : KMD2 JEDEC : JEITA : -
: Dot (Year, week, factory)
0.7±0.05
lTaping Dimensions (Unit : mm)
KMD2
lStructure
(1) Cathode
(2) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
40 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io IFSM
Glass epoxy board mounted, 60Hz half sin wave, resistive load
60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
30 1 5 125
V A A °C
Storage temperature
Tstg
- -55 to +125 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage Reverse current
VF1 IF=0.7A - - 0.47 V VF2 IF=1.0A - - 0.52 V IR1 VR=10V - - 200 mA IR2 VR=30V - - 500 mA
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2015.10 - Rev.A
RB161SS-30 lElectrical Characteristic Curves
Data Sheet
FORWARD CURRENT : IF (A)
5 1
0.1 0.01 0.001
Tj = 125°C Tj = 75°C Tj = 25°C Tj = -25°C
0.0001 0
200 400 600 800 1000
FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
REVERSE CURREN...