SIZ914DT

SiZ914DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) RDS(on) () (Max.) 0.00640 at VGS = 10 V 30 0.01000 at VGS = 4.5 V 30 0.00137 at VGS = 10 V 0.00194 at VGS = 4.5 V ID (A)g Qg (Typ.) 16a 7.2 nC 16a 40a 30.1 nC 40a PowerPAIR® 6 x 5 Pin 1 1 G2 8 7 S1/D2 Pin 9 S2 6 5 G1 D1 2 D1 3 5 mm D1 D1 4 6 mm Ordering Information: SiZ914DT-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Gen IV Power MOSFETs 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D1 CPU Core Power Computer/Server Peripherals Synchronous Buck Converter G1 POL Telecom DC/DC N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 + 20, - 16 16a 40a 16a 40a 16a, b, c 40a, b, c 15.5b, c 38.8b, c 80 100 19 3.25b, c 28 4.3b, c 10 20 5 20 22.7 10...