SIZ900DT

New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) () Channel-1 0.0072 at VGS = 10 V 30 0.0092 at VGS = 4.5 V Channel-2 0.0039 at VGS = 10 V 30 0.0047 at VGS = 4.5 V ID (A) 24a 24a 28a 28a Qg (Typ.) 13.5 nC 34 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook System Power POL Synchronous Buck Converter PowerPAIR® 6 x 5 Pin 1 G1 1 D1 5 mm 2 D1 D1 3 D1 G2 8 S2 S1/D2 Pin 9 7 S2 6 S2 4 6 mm 5 Ordering Information: SiZ900DT-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 G1 N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 ± 20 24a 28a 24a 28a 19b, c 15.5b, c 28b, c 22b, c 90 24a 3.8b, c 110 28a 4.3b, c 20 35 20 61 48 100 31 64 4.6b, c 3b, c 5.2b, c 3.3b, c - 55 to 150 26...