Dual N-Channel MPSFET
New Product
SiZ900DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Channel-...
Description
New Product
SiZ900DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Channel-1
0.0072 at VGS = 10 V 30
0.0092 at VGS = 4.5 V
Channel-2
0.0039 at VGS = 10 V 30
0.0047 at VGS = 4.5 V
ID (A) 24a 24a 28a 28a
Qg (Typ.) 13.5 nC
34 nC
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFETs 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Notebook System Power POL Synchronous Buck Converter
PowerPAIR® 6 x 5
Pin 1
G1 1 D1
5 mm
2 D1
D1 3
D1
G2 8 S2
S1/D2 Pin 9
7 S2
6 S2
4 6 mm
5
Ordering Information: SiZ900DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
N-Channel 1 MOSFET
G2
N-Channel 2 MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
30
± 20
24a 28a 24a 28a
19b, c 15.5b, c
28b, c 22b, c
90 24a
3.8b, c
110 28a 4.3b, c
20 35
20 61
48 100
31 64
4.6b, c 3b, c
5.2b, c 3.3b, c
- 55 to 150
26...
Similar Datasheet