SIZ704DT

New Product N-Channel 30-V (D-S) MOSFETs SiZ704DT Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.024 at VGS = 10 V Channel-1 30 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V Channel-2 30 0.017 at VGS = 4.5 V ID (A) 12a 12a 16a 16a Qg (Typ.) 3.8 nC 7.3 nC Pin 1 PowerPAIR™ 6 x 3.7 G1 3.73 mm 1 D1 2 D1 D1 3 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS VIN/D1 Notebook System Power POL GHS 1 VIN 2 VIN 3 Low Current DC/DC GHS/G1 VIN N-Channel 1 MOSFET VSW/S1/D2 G2 6 S2 5 S1/D2 S2 4 6.00 mm GLS 6 GND VSW 5 GND 4 GLS/G2 N-Channel 2 MOSFET Ordering Information: SiZ704DT-T1-GE3 (Lead (Pb)-free and Halogen-free) GND/S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 30 12a 12a 9.4b, c 7.5b, c 30 12a 3.1b, c 10 ± 20 16a 16a 14b, c 11.2b, c 40 16a 3.7b, c 15 5 11 20 30 12.9 19 ...