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SIZ340DT Dataheets PDF



Part Number SIZ340DT
Manufacturers Vishay
Logo Vishay
Description N-Channel MOSFET
Datasheet SIZ340DT DatasheetSIZ340DT Datasheet (PDF)

www.vishay.com SiZ340DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0095 at VGS = 10 V Channel-1 30 0.0137 at VGS = 4.5 V 0.0051 at VGS = 10 V Channel-2 30 0.0070 at VGS = 4.5 V ID (A) 30 a 22 40 a 40 a Qg (Typ.) 5.6 nC 10.1 nC FEATURES • PowerPAIR® Optimizes high-side and low-side MOSFETs for synchronous buck converters • TrenchFET® power Mosfets • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see w.

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www.vishay.com SiZ340DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0095 at VGS = 10 V Channel-1 30 0.0137 at VGS = 4.5 V 0.0051 at VGS = 10 V Channel-2 30 0.0070 at VGS = 4.5 V ID (A) 30 a 22 40 a 40 a Qg (Typ.) 5.6 nC 10.1 nC FEATURES • PowerPAIR® Optimizes high-side and low-side MOSFETs for synchronous buck converters • TrenchFET® power Mosfets • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm Top View D1 1 4 3 2 G1 D1 D1 D1 Bottom View Ordering Information: SiZ340DT-T1-GE3 (lead (Pb)-free and halogen-free) APPLICATIONS • Synchronous buck - Battery charging - Computer system power - Graphic cards • POL D1 G1 N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source Drain Diode Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d,e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 +20, -16 30 a 40 a 26.5 40 a 15.6 b,c 22.6 b,c 12.4 b,c 18.1 b,c 100 150 13.9 26 3.1 b,c 3.5 b,c 10 15 5 11 16.7 31 10.7 20 3.7 b,c 4.2 b,c 2.4 b,c 2.7 b,c -55 to 150 260 V A mJ W °C Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. S14-0611-Rev. B, 24-Mar-14 1 Document Number: 62877 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SiZ340DT Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Typ. Max. Maximum Junction-to-Ambient a,b Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 27 34 6 7.5 Notes a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2. Channel-2 Typ. Max. 24 30 3.2 4 Unit °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA VDS Temperature Coefficient ΔVDS/TJ ID = 250 μA VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 μA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA Gate Source Leakage IGSS VDS =0 V, VGS = +20 V, -16 V Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V IDSS VDS = 30 V, VGS =0 V, TJ = 55 °C On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance ID(on) RDS(on) gfs Ciss Coss Crss VDS ≥ 5 V,VGS = 10 V VGS = 10 V, ID = 15.6 A VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 13 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 15.6 A VDS = 15 V, ID = 20 A Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS =15 V, VGS = 0 V, f = 1 MHz Crss / Ciss Ratio Total Gate Charge VDS = 15 V, VGS = 10 V, ID = 15.6 A Qg VDS = 15 V, VGS = 10 V, ID = 20 A Gate-Source Charge Gate-Drain Charge Output Charge Gate Resistance Qgs Qgd Qoss Rg Channel-1 VDS = 15 V,VGS = 4.5 V, ID = 15.6 A Channel-2 VDS = 15 V,VGS = 4.5 V, ID = 20 A f = 1 MHz Min. Typ. Max. Unit Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 30 - - V 30 - - - 18.4 - - 30 mV/°C - -4.3 - - -5 - 1 - 2.4 V 1 - 2.4 - - ± 100 nA - - ± 100 - -1 - -1 μA - -5 - -5 10 - - A 10 - - - 0.0079 0.0095 - 0.0042 0.0051 Ω - 0.0110 0.0137 - 0.0058 0.0070 - 37 - 60 - S Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.042 0.025 0.3 0.3 760 1552 250 450 32 40 12.3 22.6 5.6 10.1 2.3 4.2 1 1.8 6.6 12.4 1.7 1.3 0.084 0.050 19 35 9 16 3.4 2.6 pF nC Ω S14-0611-Rev. B, 24-Mar-14 2 Document Number: 62877 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT .


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