N-Channel 30 V (D-S) MOSFET
SiSA14DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
30 0.00510 at VGS = 10 V 0.00850 at VGS = 4.5 V
ID (A)f, g Qg (Typ.) 20 9.4 nC
PowerPAK® 1212-8
3.30 mm
D 8D
7 D
6 D
5
S 1S
3.30 mm
2 S
3G
4
Bottom View
Ordering Information: SiSA14DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Gen IV Power MOSFET
• 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Conversion • Synchronous Rectification • Synchronous Buck Converter • DC/AC Inverter
G
D
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
Limit
30
+ 20, - 16 20g 20g
19.7a, b 10.4a, b
80 20g 3.2a, b
15
11.25
26.5
17 3.57a, b 2.3a, b - 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain)
t 10 s Steady State
Symbol
RthJA RthJC
Typical 28 3.8
Maximum 35 4.7
Unit °C/W
Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 °C/W. f. Based on TC = 25 °C. g. Package limited.
Document Number: 63252
For technical questions, contact:
[email protected]
www.vishay.com
S12-3076-Rev. A, 24-Dec-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA14DN
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance
Total Gate Charge
VDS VDS/TJ VGS(th)/TJ VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss Coss Crss
Qg
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA VDS = 0 V, VGS = + 20 V, - 16 V
VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V VGS 10 V, ID = 10 A VGS 4.5 V, ID = 8 A VDS = 10 V, VGS = 10 V
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 15 A
Gate-Source Charge Gate-Drain Charge
Qgs Qgd
Output Charge
Qoss
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time
tr td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Guaranteed by design. b. Pulse test; pulse width 300 µs, duty cycle 2 %.
VDS = 15 V, VGS = 0 V to 4.5 V, ID = 15 A VDS = 15 V, VGS = 0 V f = 1 MHz VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1
TC = 25 °C IS = 5 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min. 30 1.1 30
0.4
Typ. Max. Unit
V
20 - 4.5
mV/°C
2.2 V
± 100 nA
1 µA
10
A
0.00425 0.00510 0.00680 0.00850
65 S
1450
445 pF
38
19.4 29
9.4 14
4 nC
1.8
12.5
1.65 3.3
9 18
8 16
18 36
8 16 ns
15 30
12 24
18 36
9 18
0.76 24 14 12 12
14.1 80 1.1 48 28
A
V ns nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact:
[email protected].