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SISA14DN Dataheets PDF



Part Number SISA14DN
Manufacturers Vishay
Logo Vishay
Description N-Channel MOSFET
Datasheet SISA14DN DatasheetSISA14DN Datasheet (PDF)

N-Channel 30 V (D-S) MOSFET SiSA14DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 30 0.00510 at VGS = 10 V 0.00850 at VGS = 4.5 V ID (A)f, g Qg (Typ.) 20 9.4 nC PowerPAK® 1212-8 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 Bottom View Ordering Information: SiSA14DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 .

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N-Channel 30 V (D-S) MOSFET SiSA14DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 30 0.00510 at VGS = 10 V 0.00850 at VGS = 4.5 V ID (A)f, g Qg (Typ.) 20 9.4 nC PowerPAK® 1212-8 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 Bottom View Ordering Information: SiSA14DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC Conversion • Synchronous Rectification • Synchronous Buck Converter • DC/AC Inverter G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg Limit 30 + 20, - 16 20g 20g 19.7a, b 10.4a, b 80 20g 3.2a, b 15 11.25 26.5 17 3.57a, b 2.3a, b - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t  10 s Steady State Symbol RthJA RthJC Typical 28 3.8 Maximum 35 4.7 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 °C/W. f. Based on TC = 25 °C. g. Package limited. Document Number: 63252 For technical questions, contact: [email protected] www.vishay.com S12-3076-Rev. A, 24-Dec-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSA14DN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = + 20 V, - 16 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 10 V VGS 10 V, ID = 10 A VGS 4.5 V, ID = 8 A VDS = 10 V, VGS = 10 V VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 15 A Gate-Source Charge Gate-Drain Charge Qgs Qgd Output Charge Qoss Gate Resistance Rg Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Notes: a. Guaranteed by design. b. Pulse test; pulse width  300 µs, duty cycle  2 %. VDS = 15 V, VGS = 0 V to 4.5 V, ID = 15 A VDS = 15 V, VGS = 0 V f = 1 MHz VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  TC = 25 °C IS = 5 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Min. 30 1.1 30 0.4 Typ. Max. Unit V 20 - 4.5 mV/°C 2.2 V ± 100 nA 1 µA 10 A 0.00425 0.00510 0.00680 0.00850  65 S 1450 445 pF 38 19.4 29 9.4 14 4 nC 1.8 12.5 1.65 3.3  9 18 8 16 18 36 8 16 ns 15 30 12 24 18 36 9 18 0.76 24 14 12 12 14.1 80 1.1 48 28 A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: [email protected].


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