New Product
SiS780DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on)...
New Product
SiS780DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with
Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0135 at VGS = 10 V 30
0.0175 at VGS = 4.5 V
ID (A) 18a 18a
Qg (Typ.) 7.3 nC
PowerPAK® 1212-8
3.30 mm
S 1S
3.30 mm
2 S
3G
4
D
8D
7 D
6 D
5
Bottom View
Ordering Information: SiS780DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
SkyFET® Monolithic TrenchFET® Gen III Power MOSFET and
Schottky Diode
100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Notebook PC - System Power, Memory
Buck Converter Synchronous Rectifier Switch
D
G N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L =0.1 mH
IAS EAS
Maximum Power Dissipation
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
PD
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit 30
± 20 18a 18a 12b, c 9.5b, c 50 18a 2.9b, c 15
11.25
27.7
17.7 3.5b, c 2.2b, c - 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maxim...