SIS496EDNT

www.vishay.com SiS496EDNT Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 7 5 D 8 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.0048 0.0062 14 50 a Single FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC converter Battery switch Power management For mobile computing G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiS496EDNT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche current Avalanche energy L = 0.1 mH Continuous source-drain diode current TC = 25 °C TA = 25 °C TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e VDS VGS ID IDM IAS EAS IS PD TJ, Tstg LIMIT 30 ± 20 50 a 50 a 20.4 b, c 16.3 b, c 200 25 31 43.3 3.2 b, c 52 33 3.8 b, c 2 b, c -55 to +150 260 UNIT V A mJ A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum j...