SIRA12DP

New Product N-Channel 30 V (D-S) MOSFET SiRA12DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 0.0043 at VGS = 10 V 30 0.0060 at VGS = 4.5 V ID (A)a, g 25 25 Qg (Typ.) 13.6 nC PowerPAK® SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: SiRA12DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen IV Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Power Density DC/DC Synchronous Rectification VRMs and Embedded DC/DC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit 30 + 20, - 16 25g 25g 25b, c, g 20b, c 80 25g 3.8b, c 15 11 31 20 4.5b, c 2.9b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 ...