N-Channel MOSFET
New Product
N-Channel 30 V (D-S) MOSFET
SiRA06DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
0.0025...
Description
New Product
N-Channel 30 V (D-S) MOSFET
SiRA06DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
0.0025 at VGS = 10 V 30
0.0035 at VGS = 4.5 V
ID (A)a, g 40 40
Qg (Typ.) 22.5 nC
PowerPAK® SO-8
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3 G
4
Bottom View
Ordering Information: SiRA06DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES TrenchFET® Gen IV Power MOSFET
100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS Synchronous Rectification High Power Density DC/DC VRMs and Embedded DC/DC
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L =0.1 mH
IAS EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
PD TJ, Tstg
Limit
30
+ 20, - 16
40g 40g 33.3b, c 26.6b, c 80 40g 4.5b, c 20
20
62.5
40 5b, c 3.2b, c - 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t 10 s...
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