SIR798DP

New Product SiR798DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) 0.00205 at VGS = 10 V 0.00300 at VGS = 4.5 V ID (A)a 60 60 PowerPAK® SO-8 Qg (Typ.) 41.6 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View FEATURES Halogen-free According to IEC 61249-2-21 Definition SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook PC - Vcore and Memory - Low Side D Schottky Diode G Ordering Information: SiR798DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TA = 70 °C TJ, Tstg Limit 30 ± 20 60a 60a 38.2b, c 30.3b, c 80 60a 5b, c 35 61.25 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Ca...