SIR472ADP

www.vishay.com SiR472ADP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. 0.0090 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A) a, g 18 18 Qg (TYP.) 9 nC PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiR472ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Gen IV power MOSFET 100 % Rg and UIS tested Optimized for high-side switching in synchronous buck converters Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC conversion Battery protection Load switching DC/AC inverters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C ID Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.3 mH TC = 25 °C IAS EAS Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TJ, Tstg LIMIT 30 ± 20 18 g 18 g 14.2 b, c 11.3 b, c 80 13.3 g 3 b,c 8.2 10 14.7 9.4 3.3 b, c 2.1 b, c -55 to 150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UN...