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MGBR20S50C

Unisonic Technologies

DUAL MOS GATED BARRIER RECTIFIERS

UNISONIC TECHNOLOGIES CO., LTD MGBR20S50C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR20S...


Unisonic Technologies

MGBR20S50C

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Description
UNISONIC TECHNOLOGIES CO., LTD MGBR20S50C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR20S50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc. The UTC MGBR20S50C suitable for supply applications.  FEATURES * Super low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR20S50CL-TA3-T MGBR20S50CG-TA3-T Note: Pin Assignment: A: Anode K: Cathode Package TO-220 Pin Assignment 123 AKA Packing Tube  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-158.b MGBR20S50C Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 50 V Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM 50 V VRRM 50 V Average Rectified Forward Current Per Leg (Rated VR-20Khz Square Wave) - 50% Duty Cycle Total IO 10 A 20 A Peak Forward Surge Current - 1/2 60hz IFSM 180 A Peak Repetitive Reverse Surge Current (2uS-1Khz) Maximum Rate of Voltage Change ( at Rated VR ) IRRM dv/dt 2 10000 A V/μS Operating Junction Temperature Storage Junction Temperature TJ TSTG -65~+150 -65~+150 °C °C Note: Absolute maximum ratings ...




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