SIE818DF

N-Channel 75-V (D-S) MOSFET SiE818DF Vishay Siliconix PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) (Ω)e Silicon Package Limit Limit Qg (Typ.) 75 0.0095 at VGS = 10 V 0.0125 at VGS = 4.5 V 79 69 60 33 nC 60 Package Drawing www.vishay.com/doc?72945 10 9 8 D GS 7 S PolarPAK 6 D6 7 8 9 10 D D S GD FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size Low Qgd/Qgs Ratio Helps Prevent Shoot-Through 100 % Rg and UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Primary Side Switch Half-Bridge Synchronous Rectification D G D GS S 1 23 4 Top View D 5 54 32 1 Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE818DF-T1-E3 (Lead (Pb)-free) SiE818DF-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET For Related Documents www.vishay.com/ppg?74337 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C ...