Document
New Product
N-Channel 60-V (D-S) MOSFET
Si4436DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60 0.036 at VGS = 10 V 0.043 at VGS = 4.5 V
ID (A)d 8 8
Qg (Typ.) 10.5 nC
SO-8
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous
Rectifier Operation • 100 % Rg and UIS Tested
APPLICATIONS • CCFL Inverter
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4436DY-T1-E3 (Lead (Pb)-free) Si4436DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current Single-Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 mH
IS
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
60 ± 20 8a 6.8 6.1b, c 4.8b, c 25
4.2 2.1b, c
15 11.2
5 3.2 2.5b, c 1.6b, c - 55 to 150
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W.
t ≤ 10 s Steady State
Symbol RthJA RthJF
Typical 38 20
Maximum 50 25
Unit °C/W
Document Number: 73664 S09-0322-Rev. B, 02-Mar-09
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Si4436DY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance
Total Gate Charge
VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss Coss Crss
Qg
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 4.6 A VGS = 4.5 V, ID = 4.2 A VDS = 15 V, ID = 4.6 A
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 4.6 A
Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time
Qgs Qgd Rg td(on)
tr td(off)
tf td(on)
tr td(off)
tf
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current Pulse Diode Forward Currenta
IS ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 30 V, VGS = 4.5 V, ID = 4.6 A f = 1 MHz
VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C IS = 2 A
IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Min. 60 1.5
25
Typ.
Max.
Unit
55 - 6.3
0.030 0.035
20
2.5 ± 100
1 10
0.036 0.043
V mV/°C
V nA µA A Ω S
1100 90 55 21 10.5 3.5 4.2 3.3 20 150 20 60 10 15 25 10
32 16
5 30 225 30 90 15 25 40 15
pF nC Ω
ns
4.2 A
25
0.8 1.2
V
25 50 ns
25 50 nC
19 ns
6
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 73664 S09-0322-Rev. B, 02-Mar-09
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25 VGS = 10 V thru 4 V
20
5 4
ID - Drain Current (A)
ID - Drain Current (A)
15 3
10 2
5
VGS = 3 V
1
Si4436DY
Vishay Siliconix
TC = – 55 °C ID = 25 °C
ID = 125 °C
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS - Drain-to-Source Voltage (V) Output Characteristics
0.040
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V) Transfer Characteristics
1500
RDS(on) - On-Resistance (Ω)
0.036
VGS = 4.5 V
0.032 0.028
VGS = 10 V
0.024 0
5 10 15 20
ID - Drain Current (A) On-Resistance vs. Drain Current
10
ID = 4.6 A 8
VDS = 30 V 6
4 VDS = 48 V
25
VGS - Gate-to-Source Voltage (V)
2
0 0 5 10 15 20
Qg - Total Gate Charge (nC) Gate Charge
Document Number: 73664 S09-0322-Rev. B, 02-Mar-09
25
RDS(on) - On-Resistance (Normalized)
C - Capacitance (pF)
1200 900
Ciss
600
300 Coss
0 Crss 0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V) Capacitance
60
2.0
1.8.