DatasheetsPDF.com

SI4436DY Dataheets PDF



Part Number SI4436DY
Manufacturers Vishay
Logo Vishay
Description N-Channel 60-V (D-S) MOSFET
Datasheet SI4436DY DatasheetSI4436DY Datasheet (PDF)

New Product N-Channel 60-V (D-S) MOSFET Si4436DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 0.036 at VGS = 10 V 0.043 at VGS = 4.5 V ID (A)d 8 8 Qg (Typ.) 10.5 nC SO-8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % Rg and UIS Tested APPLICATIONS • CCFL Inverter S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4436DY-T1-E3 (Lead (Pb)-free) Si4436DY-T1-GE3 .

  SI4436DY   SI4436DY



Document
New Product N-Channel 60-V (D-S) MOSFET Si4436DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 0.036 at VGS = 10 V 0.043 at VGS = 4.5 V ID (A)d 8 8 Qg (Typ.) 10.5 nC SO-8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % Rg and UIS Tested APPLICATIONS • CCFL Inverter S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4436DY-T1-E3 (Lead (Pb)-free) Si4436DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit 60 ± 20 8a 6.8 6.1b, c 4.8b, c 25 4.2 2.1b, c 15 11.2 5 3.2 2.5b, c 1.6b, c - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. t ≤ 10 s Steady State Symbol RthJA RthJF Typical 38 20 Maximum 50 25 Unit °C/W Document Number: 73664 S09-0322-Rev. B, 02-Mar-09 www.vishay.com 1 Si4436DY Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 4.6 A VGS = 4.5 V, ID = 4.2 A VDS = 15 V, ID = 4.6 A VDS = 30 V, VGS = 0 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 4.6 A Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Currenta IS ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. VDS = 30 V, VGS = 4.5 V, ID = 4.6 A f = 1 MHz VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω TC = 25 °C IS = 2 A IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C Min. 60 1.5 25 Typ. Max. Unit 55 - 6.3 0.030 0.035 20 2.5 ± 100 1 10 0.036 0.043 V mV/°C V nA µA A Ω S 1100 90 55 21 10.5 3.5 4.2 3.3 20 150 20 60 10 15 25 10 32 16 5 30 225 30 90 15 25 40 15 pF nC Ω ns 4.2 A 25 0.8 1.2 V 25 50 ns 25 50 nC 19 ns 6 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73664 S09-0322-Rev. B, 02-Mar-09 New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 VGS = 10 V thru 4 V 20 5 4 ID - Drain Current (A) ID - Drain Current (A) 15 3 10 2 5 VGS = 3 V 1 Si4436DY Vishay Siliconix TC = – 55 °C ID = 25 °C ID = 125 °C 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics 0.040 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 1500 RDS(on) - On-Resistance (Ω) 0.036 VGS = 4.5 V 0.032 0.028 VGS = 10 V 0.024 0 5 10 15 20 ID - Drain Current (A) On-Resistance vs. Drain Current 10 ID = 4.6 A 8 VDS = 30 V 6 4 VDS = 48 V 25 VGS - Gate-to-Source Voltage (V) 2 0 0 5 10 15 20 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73664 S09-0322-Rev. B, 02-Mar-09 25 RDS(on) - On-Resistance (Normalized) C - Capacitance (pF) 1200 900 Ciss 600 300 Coss 0 Crss 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance 60 2.0 1.8.


SI2308BDS SI4436DY SIE818DF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)