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DBD10G

ON Semiconductor

1.0A Single-Phase Bridge Rectifier

Ordering number : EN7030B DBD10G 1.0A Single-Phase Bridge Rectifier http://onsemi.com Features • Plastic molded s...


ON Semiconductor

DBD10G

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Description
Ordering number : EN7030B DBD10G 1.0A Single-Phase Bridge Rectifier http://onsemi.com Features Plastic molded structure Peak reverse voltage : VRM=600V Average output current : IO=1.0A Electrical Connection -- + Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg ∼ Conditions Ta=25°C 50Hz sine wave, 1cycle ∼ Value 600 1.0 30 150 --40 to +150 Unit V A A °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Ta=25°C Parameter Forward Voltage Reverse Current Thremal Resistance Thremal Resistance Symbol VF IR Rth(j-l) Rth(j-a) Conditions IF=0.5A VR=VRM Junction-Lead Junction-Ambient min Value typ max Unit 1.05 V 10 mA 15 °C / W 68 °C / W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Package Dimensions unit:mm(typ.) Surface mount type (TM emboss taping) 0.25 max15° 7.62 max15° 3.2 3.7max 2.5 6.5 1.0 1.0 6.5 10.0 1.3 3.0 1.3 6.8 C0.8 6.8 C0.8 0.25 0.1 2.5 DBD10G-TM-E ORDERING INFORMATION See deta...




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