SUM110N04-2m1P

New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.0021 at VGS = 10 V 0.0024 at VGS = 4.5 V ID (A)a, c 110 110 Qg (Typ.) 240 nC TO-263 FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS Synchronous Rectification Power Supplies D RoHS COMPLIANT G G DS Top View Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 40 ± 20 110a, c 110c 29b 23b 250 80 320 110a, c 2.6b 312a 200 3.13b 2.0b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb Steady State RthJA Maximum Junction-to-Case Steady State RthJC Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Calculated based on maximum junction temperature. Package limitation current is 110 A. Typical 32 0.33 Maximum 40 0.4 Unit V A V A W °C Unit °C/W Document Number: 69983 S-80680-Rev. A, 31-Mar-08 www.vishay.com ...