SIR882ADP

www.vishay.com SiR882ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 100 0.0087 0.0094 0.0115 19.5 60 Single FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D DC/DC primary side switch Telecom/server 48 V, full/half-bridge DC/DC Industrial G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 SiR882ADP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 300 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 100 ± 20 60 a 55 17.6 b, c 13.9 b, c 80 60 a 4.9 b, c 30 45 83 53 5.4 b, c 3.4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL...