SIJ458DP

New Product N-Channel 30 V (D-S) MOSFET SiJ458DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0022 at VGS = 10 V 0.0026 at VGS = 4.5 V ID (A)a, g 60 60 Qg (Typ.) 40.6 nC PowerPAK® SO-8L Single 6.15 mm 5.13 mm D FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS POL VRM DC/DC Converters High Current Switching D 4 G 3 S 2 S 1 S Ordering Information: SiJ458DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Soldering Recommendations (Peak Temperature)d, e G S N-Channel MOSFET Limit 30 ± 20 60g 60g 35.5b, c 28.4b, c 80 60g 4.5b, c 40 80 69.4 44.4 5.0b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 20 1.3 25 °C/W 1.8 Notes: a...